| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,748 pcs
|
1748 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STFH10N60M2 is a high-performance N-Channel MOSFET. It is rated for a maximum drain-to-source voltage (Vdss) of 600V and can handle a continuous drain current (Id) of 7.5A at 25°C. The device exhibits a maximum on-resistance (Rds On) of 600mOhm at 9A and 10V gate-source voltage, with a gate threshold voltage (Vgs(th)) of 4V at 250µA.
This MOSFET utilizes Metal Oxide Semiconductor (MOS) technology and is housed in a TO-220FPAB package, suitable for through-hole mounting. It has a maximum power dissipation of 25W (Tc) and an operating temperature range of -55°C to 150°C (TJ). Key electrical parameters include a gate charge (Qg) of 13.5 nC at 10V and an input capacitance (Ciss) of 400 pF at 100V.
The STFH10N60M2 is part of the MDmesh™ series, indicating its suitability for power switching applications where efficiency and reliability are critical. Its robust design and specifications make it a suitable component for various power electronics circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage rating is 600V.
The continuous drain current is 7.5A at 25°C case temperature.
The STFH10N60M2 is housed in a TO-220FP (TO-220 Full Pack) through-hole package.
The operating junction temperature range is -55°C to 150°C.
The maximum on-resistance is 600mOhm at 9A drain current and 10V gate drive.
The maximum gate threshold voltage is 4V at 250µA drain current.
The maximum power dissipation is 25W at case temperature.