| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STF9NM60N is a single N-Channel MOSFET with a Metal Oxide semiconductor technology. It is rated for a maximum drain-source voltage (Vdss) of 600V and a continuous drain current of 6.5A at a case temperature.
This MOSFET has a low on-resistance (Rds On) of 745mOhm at 3.25A and 10V gate drive voltage. The maximum power dissipation is 25W (Tc), and it operates at temperatures up to 150°C (TJ).
Packaged in a TO-220FP (TO-220-3 Full Pack) configuration, the STF9NM60N is designed for through-hole mounting. Key electrical characteristics include an input capacitance (Ciss) of 452pF at 50V and a gate charge (Qg) of 17.4nC at 10V.
This component is suitable for various power electronics applications requiring efficient switching and high voltage handling.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600V.
TO-220-3 Full Pack (TO-220FP).
150°C.
6.5A at case temperature.
745mOhm maximum at 3.25A and 10V gate drive.
10V.
17.4nC at 10V.