| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
398 pcs
|
398 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STF9HN65M2 is a single N-Channel MOSFET from the MOSFET (Metal Oxide) technology family. It is designed for power switching applications with a high drain-to-source voltage rating of 650V and a continuous drain current capability of 5.5A at case temperature.
Key electrical characteristics include a maximum on-resistance of 820mOhm at 2.5A and 10V Vgs, a gate threshold voltage of 4V at 250µA, and a maximum gate-to-source voltage of ±25V. The input capacitance (Ciss) is rated at 325pF at 100V, and the gate charge (Qg) is a maximum of 11.5nC at 10V.
This MOSFET has a maximum power dissipation of 20W at case temperature and an operating junction temperature up to 150°C. It is packaged in a TO-220FP (TO-220-3 Full Pack) configuration and is designed for through-hole mounting.
The STF9HN65M2 is RoHS3 compliant, has a Moisture Sensitivity Level (MSL) of 1, and is REACH unaffected.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
650 V.
5.5 A at case temperature.
820 mOhm at 2.5A drain current and 10V gate voltage.
11.5 nC at 10V gate voltage.
325 pF at 100V drain-source voltage.
TO-220-3 Full Pack (TO-220FP) through-hole package.
150 °C.