STF8NM50N The STMicroelectronics STF8NM50N is an N-Channel MOSFET designed for power applications. It offers a 500V drain-source breakdown voltage and a continuous drain current of 5A.
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STF8NM50N

Available from 2 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STMicroelectronics STF8NM50N is an N-Channel MOSFET designed for power applications. It offers a 500V drain-source breakdown voltage and a continuous drain current of 5A.
✓ Total Stock: 1,950 pcs
$ Price Range: $2.56

STF8NM50N Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,850 pcs
1850 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
100 pcs
100 pcs On Request 1 On Request On Request On Request On Request On Request

STF8NM50N Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

STF8NM50N Description

Short technical summary and product information.

The STMicroelectronics STF8NM50N is an N-Channel MOSFET belonging to the MDmesh II PWR MO series. It features a high drain-source breakdown voltage of 500V and a continuous drain current capability of 5A at a case temperature.

 

Key electrical characteristics include a maximum on-resistance of 790mOhm at 2.5A and 10V, an input capacitance of 364pF at 50V, and a gate charge of 14nC at 10V. The gate-source voltage has a maximum rating of ±25V, with a gate threshold voltage of 4V at 250µA.

 

This MOSFET operates within a temperature range of -55°C to 150°C. It is housed in a TO-220-3 Full Pack package, suitable for through-hole mounting. The device has a power dissipation rating of 20W (Tc).

 

With fast switching characteristics, including a rise time of 4.4ns and a fall time of 8.8ns, the STF8NM50N is suitable for various power switching applications.

STF8NM50N Quick Information

Product Type: MOSFET
Series: MDmesh II PWR MO
Canonical Name: STF8NM50N N-Channel MOSFET
Subcategory: Single

STF8NM50N Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STF8NM50N Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STF8NM50N Features

  • 500V drain-source breakdown voltage.
  • 5A continuous drain current.
  • Low 790mOhm Rds On.
  • Fast switching times.
  • TO-220FP package for through-hole mounting.

STF8NM50N Applications

  • Suitable for power supply circuits.
  • Used in motor control applications.
  • Ideal for general switching.
  • Power management solutions.

STF8NM50N FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage of the STF8NM50N?

The drain-source breakdown voltage is 500V.

What is the continuous drain current for the STF8NM50N MOSFET?

The continuous drain current is 5A.

What is the Rds On (Max) for the STF8NM50N at specified conditions?

The Rds On is a maximum of 790mOhm at 2.5A and 10V.

What is the operating temperature range for the STF8NM50N?

The operating temperature range is -55°C to 150°C.

What package type is the STF8NM50N MOSFET supplied in?

The STF8NM50N is supplied in a TO-220-3 Full Pack package.

Is the STF8NM50N RoHS compliant?

Yes, the RoHS status is RoHS3 Compliant.

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