| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
169 pcs
|
169 pcs | On Request | 1 | On Request | On Request | 10+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STF8NK100Z is a high-performance N-Channel MOSFET. It is designed with a maximum drain-to-source voltage (Vdss) of 1000V and can handle a continuous drain current of 6.5A at 25°C.
This MOSFET utilizes Metal Oxide Semiconductor (MOS) technology. Its on-resistance (Rds On) is specified as a maximum of 1.85 Ohms at a drain current of 3.15A and a gate-source voltage of 10V. The gate threshold voltage (Vgs(th)) is 4.5V at 100µA, and the maximum gate-to-source voltage is ±30V.
With a maximum power dissipation of 40W (Tc), the STF8NK100Z is suitable for various power switching applications. It operates within a temperature range of -55°C to 150°C (TJ).
The component is housed in a TO-220FP package and is designed for through-hole mounting. Its input capacitance (Ciss) is a maximum of 2180 pF at 25V, and the gate charge (Qg) is 102 nC at 10V.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
1000V.
6.5A at 25°C case temperature.
Maximum 1.85 Ohm at 3.15A and 10V gate drive.
4.5V at 100µA drain current.
-55°C to 150°C (junction).
TO-220FP (full pack) through-hole package.
102 nC at 10V gate-source voltage.