| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
15,000 pcs
|
15000 pcs | On Request | 1 | On Request | On Request | 1752+ | On Request | On Request | |
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
23 pcs
|
23 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Failure Rate | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STF8N80K5 is an N-Channel MOSFET with a high drain-source voltage rating of 800V. It is designed for applications requiring a continuous drain current of up to 6A.
Key electrical characteristics include a maximum on-resistance of 950mOhm at 3A and 10V gate drive. The input capacitance is rated at 450pF at 100V, and the gate charge is 16.5nC at 10V. The gate threshold voltage is 5V at 100µA, with a maximum Vgs of ±30V.
This MOSFET has a maximum power dissipation of 25W (Tc) and operates within a temperature range of -55°C to 150°C (TJ). It is housed in a TO-220FP package and is suitable for through-hole mounting.
The STF8N80K5 belongs to the SuperMESH5™ series, indicating advanced MOSFET technology for improved performance and efficiency.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
800V.
TO-220-3 Full Pack (TO-220FP) with through-hole mounting.
-55°C to 150°C (junction temperature).
6A.
950 mOhm maximum at 3A, 10V.
16.5 nC at 10V gate voltage.
SuperMESH5™ from STMicroelectronics.