| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
33,095 pcs
|
33095 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
5,000 pcs
|
5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,731 pcs
|
1731 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STF7NM60N is an N-Channel MOSFET from STMicroelectronics designed for high-voltage switching applications. It features a maximum drain-to-source voltage of 600V and a continuous drain current of 5A at case temperature. The device has a maximum on-resistance of 900mOhm at 2.5A gate drive of 10V. Gate charge is 14nC at 10V, and input capacitance is 363pF at 50V drain-source. The maximum gate threshold voltage is 4V at 250µA. The MOSFET can dissipate up to 20W at case temperature and operates at a maximum junction temperature of 150°C. It is housed in a TO-220-5 Full Pack through-hole package (TO-220FP). The device is suitable for applications requiring high voltage and moderate current handling.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600V.
TO-220-5 Full Pack (TO-220FP).
150°C.
5A at case temperature.
900mOhm maximum at 2.5A, 10V.
14nC at 10V.
363pF at 50V.