| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STF7N60M2 is a single N-Channel MOSFET with a maximum drain-source voltage (Vdss) of 600V and a continuous drain current of 5A at 25°C case temperature. It offers a low on-state resistance (Rds On) of 950mOhm at a gate-source voltage (Vgs) of 10V and a drain current (Id) of 2.5A.
This MOSFET utilizes Metal Oxide Semiconductor technology and is packaged in a TO-220FP package, designed for through-hole mounting. Key electrical characteristics include a gate charge (Qg) of 8.8nC and an input capacitance (Ciss) of 271pF, both measured under specific Vgs and Vds conditions. The operating temperature range is from -55°C to 150°C (TJ).
With a maximum power dissipation of 20W (Tc), the STF7N60M2 is suitable for various power switching applications. The gate-source voltage (Vgs) maximum rating is ±25V, and the gate threshold voltage (Vgs(th)) is 4V at 250µA.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 600 V.
The continuous drain current is 5A.
The maximum on-state resistance is 950mOhm at 2.5A drain current and 10V gate-source voltage.
The STF7N60M2 is supplied in a TO-220FP package.
It is designed for through-hole mounting.
The operating temperature range is -55°C to 150°C.