| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The STF7N60DM2 is an N-Channel power MOSFET manufactured by STMicroelectronics. It is designed for high-voltage switching applications with a maximum drain-source voltage of 600V and continuous drain current of 6A (at case temperature). The device features a maximum on-resistance of 900mOhm at 3A and 10V gate drive, ensuring efficient power conversion.
Key electrical characteristics include a gate threshold voltage of 4.75V at 250µA, a low gate charge of 7.5nC at 10V, and an input capacitance of 324pF at 100V. These parameters make it suitable for moderate-frequency switching circuits. The device can operate over a junction temperature range of -55°C to 150°C, with a maximum power dissipation of 25W.
The STF7N60DM2 is packaged in a TO-220-3 Full Pack (TO-220FP) through-hole package, which provides good thermal performance and ease of mounting on heatsinks. It is RoHS3 compliant and has an MSL of 1 (unlimited). This MOSFET is ideal for applications such as switch-mode power supplies, lighting ballasts, and motor control circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600V.
TO-220-3 Full Pack (TO-220FP).
-55°C to 150°C (junction).
6A at case temperature.
900mOhm maximum at 3A and 10V gate drive.
7.5nC maximum at 10V.