| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STF7LN80K5 is a single N-Channel MOSFET designed for power switching applications. It features a high Drain-to-Source Voltage (Vdss) of 800V and can handle a continuous current of 5A (Tc). The MOSFET is constructed using Metal Oxide technology and operates within a temperature range of -55°C to 150°C (TJ).
Key electrical characteristics include a maximum Gate Charge (Qg) of 12 nC at 10V and a maximum On-Resistance (Rds On) of 1.15 Ohm at 2.5A and 10V. The Gate Threshold Voltage (Vgs(th)) is a maximum of 5V at 100µA, with a maximum Gate-Source Voltage (Vgs) of ±30V.
This component is housed in a TO-220FP package and utilizes Through Hole mounting. The maximum power dissipation is rated at 25W (Tc). The RoHS status is listed as RoHS3 Compliant, and the Moisture Sensitivity Level (MSL) is 1 Unlimited.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
800V.
TO-220-3 Full Pack (TO-220FP) with through-hole mounting.
-55°C to 150°C (junction temperature).
N-channel.
5A at case temperature.
1.15 Ohm at Vgs = 10V and Id = 2.5A.
5V maximum at Id = 100 µA.