| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,400 pcs
|
2400 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STF6N60M2 is an N-Channel MOSFET with a maximum drain-source voltage (Vdss) of 600V and a continuous drain current of 4.5A at ambient temperature. This device utilizes MOSFET (Metal Oxide) technology and has a gate threshold voltage (Vgs(th)) of 4V at 250µA. The input capacitance (Ciss) is 232 pF at 100V, and the gate charge (Qg) is 8 nC at 10V.
With an on-resistance (Rds On) of 1.2 Ohm at 2.25A and 10V, and a maximum power dissipation of 20W (Tc), this MOSFET is suitable for various power switching applications. It operates within a temperature range of -55°C to 150°C (TJ).
The STF6N60M2 is packaged in a TO-220-3 Full Pack, with a through-hole mounting type. The supplier package is TO-220FP. It is rated for a gate-to-source voltage (Vgs) of ±25V.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600V.
TO-220-3 Full Pack (TO-220FP).
-55°C to 150°C junction temperature.
4.5 Amperes at ambient temperature.
20 Watts at case temperature.
Positive or negative 25 Volts.