| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STF5N95K3 is a high-voltage N-Channel MOSFET designed for power switching applications. It offers a maximum drain-to-source voltage (Vdss) of 950V and a continuous drain current (Id) of 4A at 25°C.
Key electrical characteristics include a maximum on-resistance (Rds On) of 3.5 Ohms at 2A and 10V gate drive voltage, and a gate threshold voltage (Vgs(th)) of 5V at 100µA. The device also features a gate charge (Qg) of 19 nC at 10V and an input capacitance (Ciss) of 460 pF at 25V.
With a maximum power dissipation of 25W (Tc) and an operating temperature range of -55°C to 150°C (TJ), the STF5N95K3 is suitable for demanding environments. It is mounted via a through-hole method and comes in a TO-220FP package.
This MOSFET is part of the SuperMESH3™ series, indicating advanced technology for improved performance and reliability in power electronics designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
950 V.
4 A.
-55°C to 150°C (junction).
TO-220-3 Full Pack (TO-220FP).
3.5 Ohm at 2A, 10V.
5V at 100µA.
19 nC at 10V.