| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,330 pcs
|
6330 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request | |
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STF5N80K5 is an N-Channel enhancement mode power MOSFET manufactured by STMicroelectronics. Designed for robust performance in high-voltage environments, this device supports a maximum drain-to-source voltage of 800V and delivers a continuous drain current of 4A at ambient temperature. The on-resistance is rated at 1.75 Ohms when driven at 10V with a 2A load, ensuring minimal conduction losses during active switching cycles.
This component features a low gate charge of 5nC and an input capacitance of 177pF, which facilitate fast switching speeds and reduce drive power requirements. The gate threshold voltage is specified at 5V under a 100µA test condition, while the maximum gate-source voltage withstands ±30V. Thermal management is supported by a maximum power dissipation of 20W at case temperature and an operating junction temperature range spanning from -55°C to 150°C.
Housed in a TO-220FP full pack through-hole package, the STF5N80K5 provides reliable mechanical mounting and adequate heat sinking capabilities for industrial and consumer electronics. Its metal oxide semiconductor technology ensures stable operation across demanding electrical conditions, making it suitable for motor control, power supply regulation, and general-purpose high-side or low-side switching circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 800V.
The component is housed in a TO-220FP full pack through-hole package.
The operating junction temperature ranges from -55°C to 150°C.
The maximum on-resistance is 1.75 Ohms when tested at 2A drain current and 10V gate-source voltage.
The maximum gate charge is 5nC when driven at 10V.