| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,228 pcs
|
5228 pcs | On Request | 1 | On Request | On Request | 17+18+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STF4LN80K5 is an N-Channel MOSFET belonging to the single FET category. It is designed for power switching applications, offering a robust 800V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 3A at 25°C.
Key electrical characteristics include a maximum on-resistance (Rds On) of 2.6 Ohms at 1A and 10V gate-source voltage, and a gate threshold voltage (Vgs(th)) of 5V at 100µA. The device has a maximum gate-source voltage of ±30V and an input capacitance (Ciss) of 122pF at 100V.
This MOSFET operates within a temperature range of -55°C to 150°C (TJ). It is housed in a TO-220FP package and features through-hole mounting. The STF4LN80K5 is specified with RoHS3 compliance, indicating adherence to environmental regulations regarding hazardous substances.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
800V.
3A at 25°C case temperature.
2.6 Ohms at 1A, 10V gate drive.
-55°C to 150°C junction temperature.
TO-220FP (Full Pack) through-hole.
3.7 nC at 10V gate voltage.
122 pF at 100V drain voltage.