| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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5,000 pcs
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5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STF42N65M5 is a high-performance N-Channel MOSFET transistor. It is designed for power switching applications and offers a maximum drain-to-source voltage (Vdss) of 650V and a continuous drain current (Id) of 33A at a case temperature (Tc).
Key electrical characteristics include a maximum on-resistance (Rds On) of 79mOhm at 16.5A and 10V, a gate charge (Qg) of 100nC at 10V, and an input capacitance (Ciss) of 4650pF at 100V. The gate threshold voltage (Vgs(th)) is 5V at 250µA, with a maximum gate-source voltage (Vgs) of ±25V.
This MOSFET operates at a maximum junction temperature (TJ) of 150°C and has a maximum power dissipation of 40W at Tc. It is housed in a TO-220-3 Full Pack package and utilizes a through-hole mounting type.
The STF42N65M5 is built using MOSFET (Metal Oxide) technology, providing efficient switching capabilities for various power electronics designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 650V.
The continuous drain current is 33A at case temperature Tc.
The on-resistance is 79mOhm maximum at 16.5A drain current and 10V gate drive.
The STF42N65M5 is available in a TO-220-3 Full Pack (TO-220FP) through-hole package.
The maximum junction temperature is 150°C.
The maximum gate charge is 100nC at 10V gate voltage.
The maximum gate threshold voltage is 5V at 250µA drain current.