| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,020 pcs
|
2020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STF42N60M2-EP is an N-channel enhancement mode power MOSFET manufactured by STMicroelectronics. Designed for high-voltage switching applications, this device supports a maximum drain-to-source voltage of 600V and delivers a continuous drain current of 34A at case temperature of 25°C. The transistor exhibits a maximum on-resistance of 87mΩ when driven at 10V, ensuring efficient power handling with minimal conduction losses.
Key electrical characteristics include a gate threshold voltage of 4.75V at 250µA and a total gate charge of 55nC at 10V. Input capacitance measures 2370pF at 100V, providing predictable switching behavior for medium-frequency power conversion circuits. The component is supplied in a TO-220FP through-hole package, which facilitates reliable thermal management and straightforward integration into industrial and automotive power systems.
Engineers utilizing this MOSFET can leverage its robust voltage rating and low Rds(on) for motor control, DC-DC converters, and general-purpose power switching tasks. The standardized pinout and mechanical dimensions simplify PCB layout and heatsinking requirements compared to surface-mount alternatives.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 600V.
The component is packaged in a TO-220FP through-hole housing.
The absolute maximum gate-source voltage (Vgs) is ±25V.
The gate threshold voltage is 4.75V measured at a gate current of 250µA.
The input capacitance (Ciss) is 2370pF when tested at 100V.