| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7,000 pcs
|
7000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STF3N62K3 is an N-Channel power MOSFET manufactured by STMicroelectronics. It features a maximum drain-source voltage (Vdss) of 620V and a continuous drain current rating of 2.7A. The device offers a maximum on-resistance of 2.5 Ohm at 1.4A drain current and 10V gate-source voltage. Key electrical characteristics include a gate threshold voltage of 4.5V max at 50µA, input capacitance of 385pF at 25V, and total gate charge of 13nC at 10V. These parameters make it suitable for high-voltage switching applications such as power supplies, converters, and motor control circuits. The MOSFET is packaged in a TO-220FP through-hole package, which facilitates easy mounting and heat dissipation.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 620V.
The maximum gate-source voltage is ±30V.
The maximum gate threshold voltage is 4.5V at 50µA drain current.
The maximum input capacitance is 385pF at 25V drain-source voltage.
The maximum total gate charge is 13nC at 10V gate-source voltage.
The maximum on-resistance is 2.5 Ohm at 1.4A drain current and 10V gate-source voltage.