| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,000 pcs
|
5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STF3LN80K5 is an N-Channel MOSFET with a high breakdown voltage of 800V. It is designed for power switching applications and features a continuous drain current capability of 2A.
Key electrical characteristics include a maximum Rds On of 3.25 Ohm at 1A and 10V gate drive, and a gate charge of 2.63 nC. The MOSFET operates within a temperature range of -55°C to 150°C.
This component is housed in a TO-220FP package, suitable for through-hole mounting. Its technology is based on Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) principles, specifically an enhancement mode N-channel configuration.
The STF3LN80K5 is part of the Mdmesh K5 series, offering efficient performance for various power electronics designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
800V.
TO-220FP (TO-220-3 Full Pack) through-hole package.
-55°C to 150°C.
Maximum 5V at 100µA drain current.
2A at case temperature.
2.63 nC at 10V gate-source voltage.
Maximum 3.25 Ohm at 1A, 10V; typical 2.75 Ohm.