| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,356 pcs
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2356 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The STMicroelectronics STF35N60DM2 is an N-channel SuperMESH™ Power MOSFET with a drain-source voltage of 800V and a continuous drain current of 3A at 25°C. This device is designed for switching applications and offers features such as extremely high dv/dt capability and 100% avalanche testing.
Key electrical characteristics include a maximum on-resistance of 4.2 Ohm at 1.5A and 10V, an input capacitance of 690 pF at 25V, and a gate charge of 35 nC at 10V. The gate-to-source voltage has a maximum rating of ±30V, and the gate threshold voltage is 4.5V at 50µA.
Packaged in a TO-220FP configuration, this MOSFET is suitable for through-hole mounting. It operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 25W at 25°C.
The SuperMESH™ series is an optimization of ST's PowerMESH™ layout, focusing on reduced on-resistance and enhanced dv/dt capability for demanding applications. This series complements ST's high-voltage MOSFET offerings.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating junction temperature range is -55°C to 150°C.
The STF3HNK90Z is available in a TO-220-3 Full Pack (TO-220FP) package with through-hole mounting.
The maximum drain-to-source voltage (Vdss) is 800V.
The continuous drain current is 3A at a case temperature of 25°C.
The maximum on-resistance (Rds On) is 4.2 Ohms at 1.5A drain current and 10V gate-source voltage.
Yes, the STF3HNK90Z is 100% avalanche tested.