| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,850 pcs
|
4850 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STF36N60M6 is an N-Channel MOSFET with a maximum drain-source voltage (Vdss) of 600V. It is designed for power switching applications, featuring a continuous drain current (Id) of 30A at a case temperature (Tc).
This MOSFET has a low on-resistance (Rds On) of 99mOhm at 15A and 10V gate drive voltage, contributing to efficient power transfer. The input capacitance (Ciss) is 1960pF at 100V, and the gate charge (Qg) is 44.3nC at 10V.
Packaged in a TO-220FP (Full Pack) configuration, it is suitable for through-hole mounting. The operating temperature range is from -55°C to 150°C (TJ), with a maximum power dissipation of 40W (Tc).
This component utilizes MOSFET (Metal Oxide) technology and has a gate-to-source voltage (Vgs) maximum of ±25V and a gate threshold voltage (Vgs(th)) of 4.75V at 250µA.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) for the STF36N60M6 is 600V.
The continuous drain current (Id) for the STF36N60M6 is 30A at the case temperature.
The STF36N60M6 is supplied in a TO-220FP package.
The operating temperature range for the STF36N60M6 is -55°C to 150°C (TJ).
The RoHS status is RoHS3 Compliant.