| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The STMicroelectronics STF35N60DM2 is a high voltage N-channel Power MOSFET from the MDmesh™ DM2 fast recovery diode series. It is designed for demanding high efficiency converters and is suitable for bridge topologies and ZVS phase-shift converters.
Key electrical specifications include a maximum drain-source voltage of 600V and a continuous drain current of 28A at 25°C case temperature. The on-resistance is a maximum of 110mΩ at 14A and 10V gate-source voltage, with a typical value of 0.094Ω. The device features a low on-resistance, extremely low gate charge and input capacitance, and is 100% avalanche tested.
This MOSFET is housed in a TO-220FP package, suitable for through-hole mounting. It operates across a wide temperature range from -55°C to 150°C (TJ). The fast-recovery body diode and high dv/dt ruggedness contribute to its suitability for switching applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600V.
28A at Tc=25°C, derating to 17A at 100°C.
Maximum 110mOhm at Id=14A, Vgs=10V; typical 0.094 Ohm.
Maximum 5V at Id=250µA.
-55°C to 150°C junction temperature.
TO-220FP (TO-220 Full Pack) through-hole.
54nC at Vgs=10V.