| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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450 pcs
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450 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STF33N65M2 is an N-Channel MOSFET designed for power switching applications. It features a high drain-source voltage rating of 650V and a continuous drain current of 24A.
Key electrical characteristics include a maximum on-resistance of 140mOhm at 12A and 10V, an input capacitance of 1790pF at 100V, and a gate charge of 41.5nC at 10V. The gate threshold voltage is 4V at 250µA, and the maximum gate-source voltage is ±25V.
This MOSFET operates at temperatures up to 150°C (TJ) and has a power dissipation of 34W (Tc). It is housed in a TO-220-3 Full Pack (TO-220FP) package and is designed for through-hole mounting.
The STF33N65M2 is RoHS3 compliant, has an MSL of 1, and is REACH unaffected. It is suitable for various power electronics designs requiring a robust and efficient switching component.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
650V.
TO-220-3 Full Pack (TO-220FP).
150°C.
41.5 nC at 10V.
1790 pF at 100V.
4V maximum at 250µA.
34W at case temperature.