| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STF33N60M6 is a high-performance N-Channel MOSFET. It is designed for various power switching applications, offering a robust 600V drain-to-source voltage (Vdss) and a continuous drain current of 25A.
Key electrical characteristics include a maximum on-resistance (Rds On) of 125mOhm at 12.5A and 10V, and a gate charge (Qg) of 33.4 nC at 10V. The device operates within a temperature range of -55°C to 150°C (TJ).
Packaged in a TO-220FP configuration, this MOSFET is suitable for through-hole mounting. Its Metal Oxide Semiconductor (MOSFET) technology ensures efficient switching performance for demanding applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 600V.
The continuous drain current is 25A at case temperature.
It is available in a TO-220-3 Full Pack (TO-220FP) package with through-hole mounting.
The junction temperature range is -55°C to 150°C.
The maximum on-resistance is 125mOhm at 12.5A drain current and 10V gate-source voltage.
The total gate charge is 33.4nC at 10V gate-source voltage.
The input capacitance is 1515pF at 100V drain-source voltage.