| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STF33N60DM6 is an N-Channel MOSFET with a maximum drain-source voltage (Vdss) of 600V. It is rated for a continuous drain current of 25A (Tc) and a maximum power dissipation of 35W (Tc).
This MOSFET operates within a temperature range of -55°C to 150°C (TJ). Key electrical characteristics include a gate-to-source voltage (Vgs) range of ±25V, a gate threshold voltage (Vgs(th)) of 4.75V (max) at 250µA, and input capacitance (Ciss) of 1500pF (max) at 100V. The on-resistance (Rds On) is a maximum of 128mOhm at 12.5A and 10V Vgs.
The component utilizes MOSFET (Metal Oxide) technology. It is supplied in a TO-220FP package and is designed for through-hole mounting.
Compliance information indicates RoHS3 compliance, MSL 1, and REACH unaffected status, though these are unverified.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600 V.
TO-220-3 Full Pack (TO-220FP) with through-hole mounting.
-55°C to 150°C (junction temperature).
4.75 V at 250 µA drain current.
128 mOhm maximum at 12.5 A drain current and 10 V gate-source voltage.
25 A at case temperature Tc.
35 nC at 10 V gate-source voltage.