| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STF33N60DM2 is an N-channel power MOSFET manufactured by STMicroelectronics. It uses a metal-oxide semiconductor technology and is designed for high-voltage switching applications.
The device features a maximum drain-source voltage of 650V and a continuous drain current of 24A at case temperature. The on-resistance is 130mOhm maximum at 12A drain current and 10V gate drive. Gate charge is 43nC at 10V, and input capacitance is 1870pF at 100V drain-source voltage. The gate threshold voltage is 5V maximum at 250µA.
The STF33N60DM2 is offered in a TO-220 Full Pack (TO-220FP) through-hole package. It operates over a junction temperature range of -55°C to 150°C. This MOSFET is suitable for power conversion circuits such as switched-mode power supplies and motor drives.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
650V.
TO-220 Full Pack (TO-220FP) through-hole package.
-55°C to 150°C (junction temperature).
24A at case temperature.
130mOhm maximum at 12A drain current and 10V gate-source voltage.
Maximum 5V at 250µA drain current.
±25V.