| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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This N-Channel MOSFET, part number STF31N65M5 from STMicroelectronics, offers a robust 650V drain-to-source voltage capability and a continuous current rating of 22A.
Key electrical characteristics include a maximum on-resistance of 148mOhm at 11A and 10V gate-source voltage, an input capacitance of 816pF, and a gate charge of 45nC. The gate threshold voltage is 5V at 250µA, with a maximum gate-source voltage of ±25V.
Designed for through-hole mounting, the STF31N65M5 comes in a TO-220-3 Full Pack (TO-220FP) package. It operates at temperatures up to 150°C (TJ) and has a maximum power dissipation of 30W (Tc).
This MOSFET utilizes Metal Oxide technology and is suitable for various power switching applications where high voltage and current handling are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage rating is 650V.
The package is TO-220-3 Full Pack (TO-220FP).
The maximum junction temperature is 150°C.
The maximum continuous drain current is 22A at Tc.
The maximum on-resistance is 148mOhm at 11A and 10V gate drive.
The maximum gate threshold voltage is 5V at 250µA.
The maximum gate charge is 45nC at 10V gate drive.