| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
750 pcs
|
750 pcs | On Request | 1 | On Request | On Request | 0926+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STF30NM50N is an N-Channel power MOSFET manufactured by STMicroelectronics. It is designed for high-voltage switching applications with a maximum drain-source voltage of 500V (550V at Tjmax) and a continuous drain current rating of 27A at Tc=25°C. The device offers a low on-resistance of 115mOhm maximum at 13.5A and 10V gate drive, which minimizes conduction losses.
Key electrical characteristics include a gate threshold voltage of 4V maximum at 250µA, input capacitance of 2740pF at 50V, and a total gate charge of 94nC at 10V. The maximum power dissipation is 40W at Tc=25°C, and the junction temperature can reach up to 150°C.
The STF30NM50N is housed in a TO-220FP (Full Pack) through-hole package, which provides electrical isolation and simplified heatsink mounting. This package is suitable for automated assembly processes and offers good thermal performance in power supply and motor control circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 500V (550V at Tjmax).
27A at Tc=25°C.
115mOhm maximum at 13.5A, 10V.
4V maximum at 250µA.
TO-220FP (Through Hole).
150°C.