| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,319 pcs
|
1319 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,300 pcs
|
1300 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STF28N65M2 is an N-Channel MOSFET designed for power applications. It features a high drain-to-source voltage rating of 650V and can handle a continuous drain current of 20A at a case temperature.
Key electrical characteristics include a maximum on-resistance of 180mOhm at 10A and 10V gate-source voltage. The gate charge is specified at a maximum of 35nC, and the input capacitance is 1440pF. The gate threshold voltage is 4V at 250µA, with a maximum gate-to-source voltage of ±25V.
This MOSFET operates at a maximum junction temperature of 150°C and has a power dissipation of 30W at the case temperature. It utilizes MOSFET (Metal Oxide) technology.
The component is packaged in a TO-220-3 Full Pack configuration, suitable for through-hole mounting. It is classified under RoHS3 compliance, has an MSL of 1, and is REACH unaffected.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
650V.
20A.
180mOhm maximum at 10A, 10V.
35nC maximum at 10V.
150°C.
TO-220FP (TO-220-3 Full Pack) through-hole.
4V maximum at 250µA.