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STF28N60DM2

The STMicroelectronics STF28N60DM2 is an N-channel Power MOSFET designed for switching applications. It features a 600V drain-source voltage and 21A continuous current.

✓ Total Stock: 6,000 pcs

$ Price Range: $2.56

STF28N60DM2 Available from 2 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Smaxon Electronics ✓ Non-Authorised Inventory information	5,000 pcs On Request	5000 pcs	On Request	1	On Request	On Request	21+	On Request	On Request
Fe Components ✓ Non-Authorised Inventory information	1,000 pcs On Request	1000 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

STF28N60DM2 Description

Short technical summary and product information.

The STMicroelectronics STF28N60DM2 is a high voltage N-channel Power MOSFET from the MDmesh™ DM2 fast recovery diode series. It is designed for demanding high efficiency converters and is ideal for bridge topologies and ZVS phase-shift converters.

Key electrical specifications include a 600V drain-to-source voltage (Vds) and a maximum continuous drain current of 21A at Tcase = 25°C. The on-resistance (Rds On) is a maximum of 0.16 Ohms at 10.5A and 10V gate-source voltage, with a typical value of 0.13 Ohms. The device features a gate-source voltage (Vgs) range of ±25V and a gate charge (Qg) of 34 nC at 10V.

This MOSFET is housed in a TO-220FP package and is suitable for through-hole mounting. It operates within a junction temperature range of -55°C to 150°C. The device is 100% avalanche tested and offers extremely high dv/dt ruggedness.

Applications include general switching applications where high efficiency and ruggedness are required.

STF28N60DM2 Quick Information

Product Type: Power MOSFET

Series: MDmesh™ DM2

Canonical Name: STMicroelectronics STF28N60DM2 N-channel Power MOSFET

Subcategory: Power MOSFET

STF28N60DM2 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

STF28N60DM2 Estimated Pricing

Qty	Low	High
1+	$2.56	$2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STF28N60DM2 Features

600V drain-source voltage rating.
21A continuous drain current.
Low on-resistance of 0.16 Ohm.
Fast-recovery body diode.
TO-220FP package for through-hole mounting.

STF28N60DM2 Applications

Ideal for high efficiency converters.
Suitable for bridge topologies.
Used in ZVS phase-shift converters.
General switching applications.

STF28N60DM2 FAQs

5 frequently asked questions generated from this part’s specifications.

What is the maximum drain-source voltage for the STF28N60DM2?

The maximum drain-source voltage is 600 V.

What is the continuous drain current of the STF28N60DM2?

The continuous drain current is 21 A at Tcase = 25 °C.

What is the maximum on-resistance for this MOSFET?

The maximum on-resistance is 0.16 Ohms at 10.5A and 10V.

What package type is the STF28N60DM2 supplied in?

The STF28N60DM2 is supplied in a TO-220FP package.

What is the operating temperature range for the STF28N60DM2?

The operating junction temperature range is -55°C to 150°C.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	STMicroelectronics
Current	21A (Tc)
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	1500 pF @ 100 V
Mounting Type	Through Hole
Operating Temperature	-55°C ~ 150°C
Power Dissipation (Max)	30W (Tc)
Rds On (Max) @ Id, Vgs	0.16 Ω Ohm
SVHC Present	Not Present
Storage Temperature	-55°C ~ 150°C
Supplier Device Package	TO-220FP
Supplier Package	TO-220FP
Technology	MOSFET
Thermal Resistance	62.5 °C/W
Vgs (Max)	±25 V
Vgs(th) (Max) @ Id	5 V @ 250µA