| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STF27N60M2-EP is a single N-Channel MOSFET from the MOSFET (Metal Oxide) technology family. It is designed for power switching applications with a maximum drain-source voltage (Vdss) of 600V and a continuous drain current (Id) of 20A at a case temperature.
Key electrical characteristics include a maximum on-resistance (Rds On) of 163mOhm at 10A and 10V, a gate threshold voltage (Vgs(th)) of 4.75V at 250µA, and a maximum gate charge (Qg) of 33nC at 10V. The device operates within a temperature range of -55°C to 150°C (TJ).
This MOSFET is housed in a TO-220-3 Full Pack package and features a through-hole mounting type. The maximum power dissipation is rated at 30W (Tc). The STF27N60M2-EP is suitable for various power electronics designs requiring robust switching performance.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 600 V.
The continuous drain current (Id) is 20A (Tc).
The maximum Rds On is 163mOhm at 10A and 10V.
The operating temperature range is -55°C to 150°C (TJ).
It is supplied in a TO-220-3 Full Pack package.
It is mounted using the through-hole method.