| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,577 pcs
|
6577 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STF25N60M2-EP is an N-channel MOSFET from STMicroelectronics, designed for high-voltage switching applications. It features a drain-source voltage (Vds) of 600V (maximum 650V at Tjmax) and a continuous drain current (Id) of 18A at 25°C case temperature. The on-resistance (Rds(on)) is typically 188 milliohms maximum at 10V gate drive, ensuring low conduction losses. The device offers a gate charge (Qg) of 29 nC at 10V and an input capacitance (Ciss) of 1090 pF at 100V, enabling efficient switching performance.
The MOSFET is packaged in a TO-220FP (TO-220 Full Pack) through-hole package, supplied in tubes. It supports an operating junction temperature range of -55°C to 150°C and has a maximum power dissipation of 30W at 25°C. The part also specifies an avalanche current capability of 3.5A. With its MDmesh M2 EP technology, this MOSFET is suitable for power conversion circuits such as switch-mode power supplies, adapters, and lighting systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vdss) is 600V nominal, with a maximum rating of 650V at Tjmax.
It is available in a TO-220FP (TO-220 Full Pack) through-hole package.
The operating junction temperature range is -55°C to 150°C.
The maximum on-resistance (Rds(on)) is 188 milliohms at Id = 9A and Vgs = 10V.
The maximum gate charge (Qg) is 29 nC at Vgs = 10V.
The maximum input capacitance (Ciss) is 1090 pF at Vds = 100V.
The avalanche current rating is 3.5A, pulse width limited by Tjmax.