| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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782 pcs
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782 pcs | On Request | 1 | On Request | On Request | 1645+ | On Request | On Request |
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The STMicroelectronics STF24NM65N is a second-generation MDmesh™ Power MOSFET designed for high-efficiency converters and demanding switching applications. This N-channel MOSFET features a 650V drain-source voltage and a maximum continuous drain current of 19A at 25°C case temperature.
Key electrical characteristics include a low on-resistance of 190mOhm maximum at 9.5A and 10V Vgs, an input capacitance of 2500pF at 50V, and a gate charge of 70nC at 10V. The device operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 40W at 25°C case temperature.
Packaged in a TO-220FP (Full Pack) configuration, the STF24NM65N is suitable for through-hole mounting. Its design utilizes STMicroelectronics' revolutionary MDmesh™ technology, combining a new vertical structure with a strip layout for low on-resistance and gate charge, making it ideal for high-efficiency power conversion circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) for the STF24NM65N is 650 V.
The STF24NM65N has a maximum continuous drain current of 19A at 25°C case temperature.
The maximum on-resistance (Rds On) for the STF24NM65N is 190mOhm at 9.5A and 10V.
The STF24NM65N is supplied in a TO-220FP package.
The operating junction temperature range for the STF24NM65N is -55°C to 150°C.