| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,050 pcs
|
4050 pcs | On Request | 1 | On Request | On Request | On Request | On Request | 2026-02-16 21:33:16 | |
|
2,150 pcs
|
2150 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,020 pcs
|
2020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This STMicroelectronics STF24N60M2 is a single N-Channel MOSFET designed for power applications. It features a maximum drain-to-source voltage (Vdss) of 600V and a continuous drain current of 18A at a case temperature.
The MOSFET has a low on-resistance (Rds On) of 190mOhm at 9A and 10V Vgs, with a gate charge (Qg) of 29nC at 10V. The input capacitance (Ciss) is 1060pF at 100V.
It operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 30W (Tc). The gate threshold voltage (Vgs(th)) is 4V at 250µA, and the maximum gate-source voltage (Vgs) is ±25V.
The component is supplied in a TO-220FP package and is designed for through-hole mounting. It is classified under MOSFET technology.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600V.
TO-220-3 Full Pack (TO-220FP) through-hole package.
-55°C to 150°C junction temperature.
18A at case temperature Tc.
190mOhm at 9A drain current and 10V gate drive.
29nC at 10V gate drive.
1060pF at 100V drain-source voltage.