| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This STF23NM50N is an N-channel MOSFET manufactured by STMicroelectronics. It offers a high drain-source voltage rating of 500V and a continuous drain current capability of 17A (Tc). The MOSFET utilizes Metal Oxide Semiconductor technology.
Key electrical characteristics include a gate threshold voltage of 4V at 250µA and a maximum gate-to-source voltage of ±25V. The on-resistance (Rds On) is specified as a maximum of 190mOhm at 8.5A and 10V gate drive. Input capacitance (Ciss) is 1330pF at 50V, and gate charge (Qg) is 45nC at 10V.
The device has a maximum power dissipation of 30W (Tc) and an operating junction temperature of up to 150°C. It is mounted via through-hole method and comes in a TO-220-3 Full Pack (TO-220FP) package.
Compliance information indicates RoHS3 compliance, Moisture Sensitivity Level 1, and REACH unaffected status. This component is suitable for various power switching applications where high voltage and moderate current handling are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
500V maximum.
TO-220-3 Full Pack (TO-220FP) through-hole package.
150°C.
4V maximum at 250µA drain current.
190mOhm maximum at 8.5A drain current and 10V gate drive.
45nC at 10V gate voltage.
1330pF at 50V drain-source voltage.