| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
20,000 pcs
|
20000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STF23N80K5 is a single N-Channel MOSFET designed for high voltage applications. It features a maximum Drain-Source Voltage (Vds) of 800V and a continuous drain current of 16A.
Key electrical characteristics include a maximum Rds On of 280mOhm at 8A and 10V gate drive, with a gate threshold voltage of 5V at 100µA. The input capacitance (Ciss) is 1000pF at 100V, and the gate charge (Qg) is 33nC maximum at 10V.
This MOSFET operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 35W (Tc). It is housed in a TO-220-3 Full Pack (TO-220FP) package and utilizes a Through Hole mounting type.
The STF23N80K5 is built using MOSFET (Metal Oxide) technology and is suitable for various power switching applications requiring high voltage handling.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 800V.
The continuous drain current is 16A at case temperature.
The maximum on-resistance is 280mOhm at 8A and 10V.
The STF23N80K5 is available in a TO-220-3 Full Pack (TO-220FP) through-hole package.
The operating junction temperature range is -55°C to 150°C.
The maximum gate threshold voltage is 5V at 100µA.
The maximum gate charge is 33nC at 10V.