| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This STMicroelectronics STF22N60DM6 is a single N-Channel MOSFET belonging to the discrete semiconductor products category. It offers a high drain-to-source voltage (Vdss) of 600V and can handle a continuous drain current of 15A at a case temperature.
The MOSFET has a maximum on-resistance (Rds On) of 230mOhm when tested at 7.5A drain current and 10V gate-source voltage. Its gate charge (Qg) is a maximum of 20nC at 10V, and input capacitance (Ciss) is 800pF at 100V. The gate threshold voltage (Vgs(th)) is a maximum of 4.75V at 250µA, with a maximum gate-source voltage of ±25V.
Operating within a temperature range of -55°C to 150°C (TJ), this device has a maximum power dissipation of 30W at the case temperature. It is constructed using MOSFET (Metal Oxide) technology and is suitable for through-hole mounting.
The STF22N60DM6 is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1, indicating unlimited shelf life under standard conditions. It is supplied in a TO-220FP package.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600 V.
15 A at case temperature (Tc).
230 mOhm maximum at 7.5A drain current and 10V gate drive.
TO-220-3 Full Pack (TO-220FP) through-hole package.
-55°C to 150°C junction temperature.
20 nC at 10V gate voltage.
4.75V maximum at 250µA drain current.