| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
50 pcs
|
50 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STF21N65M5 is an N-Channel MOSFET designed by STMicroelectronics. It features a maximum drain-to-source voltage of 650V and a continuous drain current of 17A at case temperature. The on-state resistance is typically 190mOhm maximum at 8.5A and 10V gate drive. The device has a gate charge of 50nC at 10V and input capacitance of 1950pF at 100V drain-source voltage. The maximum gate-to-source voltage is ±25V, and the gate threshold voltage is up to 5V at 250µA drain current. It is packaged in a TO-220-3 Full Pack (TO-220FP) with through-hole mounting. Maximum power dissipation is 30W at case temperature, and the junction temperature can reach up to 150°C. This MOSFET is suitable for high-voltage switching applications in power conversion and control circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
650 V.
TO-220-3 Full Pack (TO-220FP).
150°C.
17A continuous at case temperature.
190mOhm maximum at 8.5A and 10V gate drive.
50nC maximum at 10V gate voltage.
Through hole.