| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7,000 pcs
|
7000 pcs | On Request | 1 | On Request | On Request | 1030 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STF20NM60D is an N-Channel MOSFET belonging to the MOSFET (Metal Oxide) technology family. This component is designed for power switching applications, offering a robust 600V drain-to-source voltage (Vdss) and a continuous drain current (Tc) of 20A.
Key electrical characteristics include a maximum power dissipation of 45W (Tc) and a low on-resistance (Rds On) of 290mOhm at 10A and 10V gate-source voltage. The gate charge (Qg) is 37nC at 10V, and input capacitance (Ciss) is 1300pF at 25V. The gate threshold voltage (Vgs(th)) is 5V at 250µA, with a maximum gate-to-source voltage of ±30V.
This MOSFET is housed in a TO-220FP package and features a through-hole mounting type. It operates within a temperature range of -65°C to 150°C (TJ). The component is RoHS3 compliant, has an MSL of 1, and is REACH unaffected.
Ideal for various power supply and control circuits, the STF20NM60D provides reliable performance in demanding applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 600V.
The continuous drain current is 20A.
The maximum power dissipation is 45W.
The operating temperature range is -65°C to 150°C.
It is available in a TO-220FP package.
It is mounted using the through-hole method.