| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,000 pcs
|
2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STF20NF20 is a single N-Channel MOSFET designed for power switching applications. It offers a high drain-to-source voltage (Vdss) of 200V and a continuous drain current capability of 18A at case temperature.
Key electrical characteristics include a maximum on-resistance (Rds On) of 125mOhm at 10A and 10V gate-source voltage, and a gate charge (Qg) of 39nC at 10V. The MOSFET operates within a temperature range of -55°C to 175°C (TJ) and has a maximum power dissipation of 30W (Tc).
This component utilizes MOSFET (Metal Oxide) technology and features a gate drive voltage requirement of 10V for its Rds On specifications. The maximum gate-source voltage (Vgs) is ±20V, with a gate threshold voltage (Vgs(th)) of 4V at 250µA.
The STF20NF20 is supplied in a TO-220-3 Full Pack package and is designed for through-hole mounting. It is rated for Moisture Sensitivity Level (MSL) 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
200V.
TO-220-3 Full Pack through-hole.
-55°C to 175°C junction temperature.
18A at case temperature.
Maximum 125mOhm at 10A drain current and 10V gate drive.
Maximum 4V at 250µA drain current.
30W at case temperature.