| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
36,000 pcs
|
36000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
282 pcs
|
282 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STF20N65M5 is a single N-Channel MOSFET designed for power switching applications. It features a high drain-to-source voltage (Vdss) of 650V and can handle a continuous drain current of 18A.
Key electrical characteristics include a maximum on-state resistance (Rds On) of 190mOhm at 9A and 10V, and a gate charge (Qg) of 45nC at 10V. The input capacitance (Ciss) is 1345pF at 100V. The device operates at temperatures up to 150°C (TJ).
This MOSFET utilizes Metal Oxide Semiconductor (MOS) technology. It is housed in a TO-220-3 Full Pack package, designed for through-hole mounting. The STF20N65M5 is suitable for applications requiring high voltage and current handling capabilities in a standard package format.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
650V.
18A at case temperature.
190mOhm maximum at 9A, 10V.
Up to 150°C.
TO-220-3 Full Pack (TO-220FP).
45nC at 10V.
1345pF at 100V.