| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STF19NM50N is a high-performance N-Channel MOSFET belonging to the discrete semiconductor products category. It is designed for power switching applications, featuring a maximum drain-to-source voltage (Vdss) of 500V and a continuous drain current (Id) of 14A at a case temperature.
Key electrical characteristics include a maximum on-resistance (Rds On) of 250mOhm at 7A and 10V gate-to-source voltage, and a gate threshold voltage (Vgs(th)) of 4V at 250µA. The MOSFET has a gate-to-source voltage (Vgs) limit of ±25V and a maximum power dissipation of 30W (Tc).
This component operates at a maximum junction temperature of 150°C. It is housed in a TO-220FP package and utilizes a through-hole mounting type. The technology employed is MOSFET (Metal Oxide).
Environmental compliance includes RoHS3 compliance and an MSL rating of 1. The REACH status is unaffected. This part is suitable for various power electronics designs requiring robust switching capabilities.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
500V.
14A at case temperature (Tc).
TO-220-3 Full Pack (TO-220FP).
150°C.
Maximum 4V at 250µA drain current.
250mOhm at 7A drain current and 10V gate drive.
30W at case temperature.