| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,150 pcs
|
3150 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STF18NM80 is a high-voltage N-Channel MOSFET designed for demanding power applications. It offers a maximum drain-to-source voltage (Vdss) of 800V and a continuous drain current (Id) of 17A at a case temperature.
This MOSFET utilizes Metal Oxide Semiconductor technology and is housed in a TO-220FP package, suitable for through-hole mounting. Key electrical characteristics include a maximum gate-to-source voltage of ±30V, a gate threshold voltage of 5V at 250µA, and a maximum on-resistance (Rds On) of 295mOhm at 8.5A and 10V drive voltage.
With a maximum power dissipation of 40W and an operating junction temperature up to 150°C, the STF18NM80 is engineered for reliable performance in power supply units, motor control, and other high-power switching circuits. Its robust design and specifications make it a suitable component for various industrial and consumer electronics.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
800V.
TO-220FP (TO-220 Full Pack) through-hole package.
150°C.
295mOhm maximum at 8.5A and 10V gate drive.
70nC maximum at 10V gate drive.
2070pF maximum at 50V drain-source voltage.
17A maximum at case temperature.