| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
15,200 pcs
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15200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STF18N60DM2 is an N-Channel MOSFET designed for high-voltage applications. It features a drain-source breakdown voltage of 600V and a continuous drain current rating of 13A at a case temperature.
Key electrical characteristics include a maximum on-resistance of 295mOhm at 6A and 10V, a gate charge of 20nC at 10V, and a gate-source voltage range of ±25V. The gate-source threshold voltage is a maximum of 5V at 250µA.
This MOSFET operates within a temperature range of -55°C to 150°C. It is supplied in a TO-220FP package suitable for through-hole mounting. The part exhibits a typical rise time of 8ns and a fall time of 32.5ns, with turn-on and turn-off delay times of 13.5ns and 9.5ns respectively.
The STF18N60DM2 is suitable for various power switching applications where high voltage and current handling are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 600 V.
The continuous drain current is 13 A.
The maximum power dissipation is 25 W.
The Rds On is a maximum of 295 mOhm at 6A and 10V.
The operating temperature range is -55°C to 150°C.
It is supplied in a TO-220FP package.