| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
85 pcs
|
85 pcs | On Request | 1 | On Request | On Request | 732 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Capacitance | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id | |
| Voltage |
The STMicroelectronics STF16NM50N is an N-channel Power MOSFET utilizing MDmesh™ II technology. This device is designed for demanding high efficiency converter applications, offering a low on-resistance and gate charge.
Key electrical specifications include a drain-source voltage (Vdss) of 500V and a continuous drain current (Id) of 15A at 25°C. The maximum on-resistance (Rds On) is 260mOhm at 7.5A and 10V gate drive. It also features a gate-source voltage (Vgs) range of ±25V and a threshold voltage (Vgs(th)) of 4V at 250µA.
With a maximum power dissipation of 30W at 25°C, the STF16NM50N is suitable for various switching applications. The device operates at a maximum junction temperature of 150°C and has a storage temperature range of -55°C to 150°C.
The STF16NM50N is available in a TO-220FP package, designed for through-hole mounting.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
500 V
TO-220FP (TO-220-3 Full Pack)
150 °C
4 V at 250 µA drain current
260 mOhm maximum at 7.5 A drain current and 10 V gate-source voltage
15 A