| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STF16N65M2 is a robust N-Channel MOSFET designed for various power switching applications. It offers a high drain-source voltage rating of 650V and can handle a continuous drain current of 11A at a case temperature of Tc.
Key electrical characteristics include a maximum on-resistance of 360mOhm at 5.5A and 10V gate-source voltage, and a gate charge of 19.5nC at 10V. The input capacitance is rated at 718pF at 100V.
This MOSFET operates within a temperature range of -55°C to 150°C. It is housed in a TO-220-3 Full Pack package, suitable for through-hole mounting.
The STF16N65M2 utilizes MOSFET (Metal Oxide) technology, providing efficient switching performance for power management circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
650V.
11A at case temperature Tc.
360mOhm maximum at 5.5A and 10V gate drive.
-55°C to 150°C junction temperature.
TO-220-3 Full Pack (TO-220FP) through-hole package.
4V maximum at 250µA drain current.
718pF maximum at 100V drain-source voltage.