| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,199 pcs
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1199 pcs | On Request | 1 | On Request | On Request | 16+ | On Request | On Request |
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The STF150N10F7 is an N-channel Power MOSFET manufactured by STMicroelectronics, utilizing STripFET™ F7 technology with an enhanced trench gate structure. This design results in very low on-state resistance and reduced internal capacitance for efficient switching.
Key electrical specifications include a maximum drain-source voltage of 100V and a continuous drain current of 65A at 25°C. The static drain-source on-resistance (Rds(on)) is a maximum of 4.2mΩ at 55A and 10V gate drive. The device operates across a wide temperature range from -55°C to 175°C.
This MOSFET is housed in a TO-220FP package and is suitable for through-hole mounting. Its features, such as low Rds(on) and high avalanche ruggedness, make it suitable for various switching applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
100V.
TO-220FP (Full Pack) through-hole package.
-55°C to 175°C (junction temperature).
4.5V at 250µA drain current.
Maximum 4.2mΩ at 55A drain current and 10V gate voltage.
117 nC at 10V gate voltage.
495mJ at starting junction temperature 25°C, ID=30A, VDD=50V.