| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,950 pcs
|
2950 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,020 pcs
|
2020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
745 pcs
|
745 pcs | On Request | 1 | On Request | On Request | 14+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STF14NM50N is an N-Channel MOSFET with a maximum drain-to-source voltage (Vdss) of 500V and a continuous drain current of 12A at a case temperature of Tc.
This MOSFET features a low on-resistance (Rds On) of 320mOhm at 6A and 10V, and a gate charge (Qg) of 27nC at 10V. The gate threshold voltage (Vgs(th)) is 4V at 100µA, with a maximum gate-to-source voltage (Vgs) of ±25V.
It operates within a temperature range of -55°C to 150°C (TJ) and has a power dissipation of 25W (Tc). The component utilizes MOSFET (Metal Oxide) technology.
The STF14NM50N is housed in a TO-220-3 Full Pack package, designed for through-hole mounting.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
500 V.
TO-220-3 Full Pack (TO-220FP).
-55°C to 150°C (junction temperature).
27 nC at 10 V.
320 mOhm maximum at 6A and 10V gate-source voltage.
816 pF at 50 V drain-source voltage.
4V maximum at 100µA drain current.