| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,550 pcs
|
1550 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STF13NM60ND is an N-channel power MOSFET manufactured by STMicroelectronics. It features a drain-to-source voltage rating of 600V and a continuous drain current of 11A. The device has a maximum on-resistance of 380mOhm at 5.5A and 10V gate drive, making it suitable for high-voltage switching applications.
This MOSFET offers a maximum power dissipation of 25W at case temperature, with an input capacitance of 845pF at 50V and a total gate charge of 24.5nC at 10V. The gate threshold voltage is 5V maximum at 250µA drain current, and the maximum gate-source voltage is ±25V.
The STF13NM60ND is housed in a TO-220FP (TO-220-3 Full Pack) through-hole package, which provides full insulation for the mounting tab. The operating junction temperature range extends to 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage rating is 600V.
The continuous drain current is 11A at case temperature.
The maximum on-resistance is 380mOhm at 5.5A and 10V gate drive.
The STF13NM60ND is available in a TO-220FP (TO-220-3 Full Pack) through-hole package.
The maximum junction temperature is 150°C.
The maximum gate charge is 24.5nC at 10V gate-source voltage.