| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,000 pcs
|
2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
950 pcs
|
950 pcs | On Request | 1 | On Request | On Request | 749 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STF13NM50N is a high-performance N-channel Power MOSFET designed for demanding switching applications. It features the second generation of MDmesh™ technology, offering low on-resistance and gate charge for high efficiency converters.
Key electrical specifications include a Drain-Source Voltage (Vdss) of 500V, a continuous Drain Current (Id) of 12A at 25°C, and a maximum Rds On of 320mOhm at 6A and 10V. The device also has a Gate Charge (Qg) of 30 nC at 10V and an Input Capacitance (Ciss) of 960 pF at 50V.
This MOSFET is housed in a TO-220FP package, suitable for through-hole mounting. It operates within a temperature range of -55°C to 150°C (TJ) and has a total power dissipation of 25W at 25°C (Tc).
The STF13NM50N is 100% avalanche tested, ensuring reliability in its intended applications. Its design is optimized for high efficiency in power conversion systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 500V.
The STF13NM50N is available in the TO-220FP through-hole package.
The operating junction temperature range is -55°C to 150°C.
The maximum gate threshold voltage (Vgs(th)) is 4V at 250µA.
The maximum on-resistance (Rds on) is 320mOhm at 6A and 10V gate drive.
The maximum gate charge (Qg) is 30nC at 10V gate drive.