| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
950 pcs
|
950 pcs | On Request | 1 | On Request | On Request | 749 | On Request | On Request | |
|
780 pcs
|
780 pcs | On Request | 1 | On Request | On Request | 1513+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STF12NM60N is a second-generation MDmesh™ Power MOSFET featuring an N-channel configuration. It is designed for high-efficiency converters and demanding switching applications.
Key electrical characteristics include a drain-source voltage (Vdss) of 600V and a continuous drain current of 10A at TC=25°C. The on-resistance (Rds(on)) is a maximum of 410mOhm at 5A and 10V gate-source voltage. It also features low input capacitance and gate charge, with a gate charge (Qg) of 30.5 nC maximum at 10V.
This MOSFET is rated for a maximum continuous drain current of 6.3A at TC=100°C and a pulsed drain current of 40A. The maximum power dissipation is 25W at TC=25°C. The operating junction temperature ranges from -55°C to 150°C.
The STF12NM60N is supplied in a TO-220FP package, suitable for through-hole mounting. Its technology is MOSFET (Metal Oxide), and it is classified as an N-Channel FET.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) is 600V.
The STF12NM60N is available in a TO-220FP (TO-220 full pack) through-hole package.
The junction temperature range is -55°C to 150°C.
The maximum on-resistance (Rds(on)) is 410mOhm at 5A and 10V gate drive.
The maximum gate charge (Qg) is 30.5nC at 10V gate voltage.
Yes, it is an N-Channel MOSFET.